Slide_2020_07_14 by Yoshiaki Hagiwara

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Sony's Representative Inventions Supporting
Stacked Multi-Functional CMOS Image Sensors

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in Japanese,

https://www.sony.co.jp/SonyInfo/News/notice/20200626/

in English,

https://www.sony.net/SonyInfo/News/notice/20200626/

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Hagiwara invented the Pinned Photodiode (PPD) and also
the vertual phase charge transfer operation scheme
with the complete charge transfer mode with no image lag..






















SONY Fairchild Patent War on in pixel VOD basic patent from 1991 to 2000.

Farichild invented the in pixel VOD for the CCD/MOS photo capacitor in July 1975
while Sony invented the in pixel VOD for the PNPN junction dynamic photo transistor
in Nov.1975, only four month later. But the small time delay made a big trouble for Sony.
























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Sony invented Pinned Photodiode with VOD function in 1975.
Sony developed the FT CCD Image Sensor with Pinned Photodiode in 1978.
NEC did not developed the ILT CCD with no image lag in 1982.
KODAK did not developed the ILT CCD with no image lag in 1984.
Sony in 1987 the ILT CCD with Pinned Photodiode with the vertical overflow
drain (VOD) and named it Hole Accumulation Diode (HAD)
Pinned Photodiode must have the heavily doped channel stops nearby
and also completely buried signal charge collection and storage N region.
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In 1975, Sony proposed the Pinned surface PNP and PNPN junction type
dynamic phototransistor with the in pixel vertical overflow drain (VOD)
function for light detecting devices.

In 1978, Sony introduced one chip FT CCD image sensor with the Pinned
surface PNP junction type dynamic phototransistor which then became
the primary photodetector for CCD image sensors.

In 1984 Kodak called the Sony original Pinned surface PNP junction type
dynamic phototransistor simply as Pinnned Photodiode.

In 1987, Sony introduced a 2/3 inch, 380,000-pixel CCD image sensor
(ICX022) with the Pinned surface NPNP junction type dynamic Photo
Thryristor with VOD function which Sony then called simply as Hole
Accumulation Diode (HAD).

In the 1990s, the era of passport size video cameras demands compact CCD
image sensors with large numbers of pixels (1/2 inch or smaller with
400,000 pixels or more).

In 1995, Kodak adopted Pinned Photodiode for CMOS image sensors.

Pinned Photodiodes, since invention by Sony in 1975, are still
the primary photodetector for CCD and CMOS image sensors now.

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hagiwara-yoshiaki@aiplab.com ( http://www.aiplab.com/ )

hagiwara@ssis.or.jp ( http://www.ssis.or.jp/en/index.html )

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