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hagiwara-yoshiaki@aiplab.com ( http://www.aiplab.com/ )
hagiwara@ssis.or.jp ( http://www.ssis.or.jp/en/index.html )
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Slide_Index
Part 001 002 003 004 005 006 007 008 009 010
Part 011 012 013 014 015 016 017 018 019 020
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What is AIPS ( Artificial Intelligent Partner System ) ?
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賢い撮像装置（ Intelligent Image Sensor System)の研究です。
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監視カメラでの応用では、助けを必要とする人や泥棒さんの検出、
外科手術用内視鏡では、がん細胞群の検出などに期待されます・
（a） 画像信号による撮影制御（焦点制御技術、手ぶら補正技術等）
(b) 画像シーンの解析（構図抽出、被写体認識、撮影 Mode分析）
(c) 高解像化技術（ひずみ補正、HDR合成、超高解像化処理技術）
(d) 画像加工技術（画像をマンガ化、人の顔を似顔絵にする技術等も）
(e) 画像合成技術（パノラマ合成技術、特殊効果技術など）
(f) Refocus 技術（ぼけた映像や文字情報をはっきりさせます）
(g) 符号化開口などの特殊技術の構築等
いろいろな技術検討項目があり大変な総合技術力が不可欠です。
スマホ、自動運転車、ロボットなど応用され、現代文明の基盤に
とって、不可欠のものとなっています。これは日本の将来を豊かに
する産業です。その産業の活性化と発展のために、政府も企業も
是非、全力で取り組み、その未来に投資していただきたいです。
萩原にも、お金をください（笑顔）。
萩原 良昭
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萩原考案の1975-127647 特許では、
この埋め込み電荷蓄積部のP+層の電位に注目した、かつ受光表面がN+層で
ピン留され、かつ、世界初の考案のGLOBAL SHUTTER機能と裏面照射型
を持つDynamic Photo Transistor の動作原理を明らかにした。
萩原の1975-134985 特許では、
この埋め込み電荷蓄積部のN層の電位に注目した、かつ受光表面がP+層で
ピン留された VOD 機能を持つ Dynamic Photo Transistor の
動作原理を明らかにした。
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Hagiwara wrote a book on the AIPS digital circuits world.
Yoshiaki Hagiwara wrote a book on "the World of Artificial Intelligent
Digital Circuits",
which is important and needed to built the intelligent image sensor systems.
ISBM978-4-88359-339-2 ( Hard Cover, 460 page, 9000 Japanese Yen + tax )
If you are interestied in the book, Please visit
https://www.seizansha.co.jp/ISBN/ISBN978-4-88359-339-2.html
https://www.seizasha.co.jp/
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（１）萩原の１９７５年の３件の特許と１９７８年のＳＳＤＭ１９７８での論文
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<1> JP1975-127646 http://www.aiplab.com/JP1975-127646.pdf
<2> JP1975-127647 http://www.aiplab.com/JP1975-127647.pdf
<3> JP1975-134985 http://www.aiplab.com/JP1975-134985.pdf
<4> Y. Daimon-Hagiwara et.al., Proc. 10th Conf. on Solid-State
Devices,
SSDM1978, Tokyo, 1978, pp.335-340,
http://www.aiplab.com/P1978_Pinned_Photodiode_1978_Paper_by_Hagiwara.pdf
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（２）この件で Albert さんの 2006年の論文の中では「萩原のSSDM1978
の論文の受光素子が、（１）ＮＥＣ（２）ＫＯＤＡＫ（３）ＳＯＮＹの
原型 ＭＯＴＨＥＲ（生みの親）である」と賞賛しています。これは
「萩原がＰＰＤの概念を最初に考案した発明者だ」と解釈できるものです。
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http://www.harvestimaging.com/pubdocs/089_2005_dec_IEDM_hole_role.pdf
萩原のSSDM1978の論文の重要性を、その論文の発表の28年後の2006年に
世界ではじめて、Delft 大学のProf. Albert Theuwissenは彼のIEDM2006年
の論文で下記のようにコメントしています。
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The effect can be solved by defining the potential in the open
areas through an extension of the p+ channel stopper.
A simple self-aligned implant of 2x10(13) /cm(2) boron ions is
sufficient to extend the channel stop areas to the gate edge
and consequently fix the potential in the open areas [2].
The result after this self-aligned implant is shown in Figure 3.
The presence of enough holes plays a crucial role in fixing the
potential for the regions “beyond control” of the gates.
(Is this structure the mother of the pinned-photodiode
or buried diode or hole-accumulation device ? )
[2] Y. Daimon-Hagiwara et.al., Proc. 10th Conf. on Solid-State Devices,
SSDM1978, Tokyo, 1978, pp.335-340,
http://www.aiplab.com/P1978_Pinned_Photodiode_1978_Paper_by_Hagiwara.pdf
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（３）ＩＥＥＥ 主催の国際学会での下記２件の論文で引用されました。
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＜１＞ 3DIC2019 Conference Paper in Sendai, Japan 2019
"Multichip CMOS Image Sensor Structure for Flash Image Acquisition"
IEEE International 3D Systems Integration Conference 2019 (3DIC2019)
Digest of Technical Papers, Sendai, Japan, Paper4017, October 2019
http://www.aiplab.com/P2019_3DIC2019Paper_on_3D_Pinned_Photodiode.pdf
＜２＞ EDTM2020_PaperID3C-4
"Simulation and Device Characterization of the P+PN+P Junction Type
Pinned Photodiode and Schottky Barrier Photodiode
http://www.aiplab.com/P2020_EDTM2020_PaperID_3C4_by_Hagiwara.pdf
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（３）半導体産業人協会の歴史館の公式ＷＥＢ掲載記事
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Review of Early Developments of Image Sensors in Japan
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https://www.shmj.or.jp/museum2010/exhibi1005.html in Japanese
https://www.shmj.or.jp/english/pdf/dis/exhibi1005E.pdf in English
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（４）ＳＯＮＹ（株）とＳＳＳ（株）からの共同ＷＥＢ掲載記事
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本社知財をはじめIR関係者の皆さんに協力いただき
下記URLにてソニー／SSS連名で公開いたしました。
和文：
積層型多機能CMOSイメージセンサーを支える代表的なソニー発明について
https://www.sony.co.jp/SonyInfo/News/notice/20200626/
英文：
Sony's Representative Inventions Supporting Stacked
Multi-Functional CMOS Image Sensors
https://www.sony.net/SonyInfo/News/notice/20200626/
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Hagiwara Publication List
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What is Pinned Photodiode ?
Study Special Relativity Theory
What is Abura Wake Zan ?
Study Korean for Your Enjoyment
Enjoy C-programming.
IEEE_EDS_Kansai_Chapter_IMFEDK2006_Hagiwara.pdf
DRAM_SRAM_Technology_and_Problems_1998_07_29_Hagiwara
Pinned_Photodiode_must_have_a_heavy_doped_Channel_Stops
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Part 001 002 003 004 005 006 007 008 009 010
Part 011 012 013 014 015 016 017 018 019 020
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001 Compare NPNP,PNP and NPS phododieo, SONY PPD AWARD
002 The three basic Hagiwara 1975 patents
003 Heavy Surface P+ Channel Stops
004 IEDM1982 paper
005 Active Pixel sesnor
006 SSDM1978 paper
007 JP1975-127647 and JP1975-134985 patents
008 JP2014-135497 patent
009 The World of Digital Circuits
010 Sony Bipolar Transistor
011 My old wonderful memory pictures
012 Future of Robot Vision
013 ANA Jumbo Jet, SONY Patent Wars
014 IEEE Solid State Circuits Magazine, Summer 2013
015 Sony Kumamoto Tech Visit, Nov 19 2018
016 016 Three types of VOD
017 Inonovation 100 and History Museum WEB
018 JP1975-127647 and the future 3D integration
019 Awards
020 Difference of PPD and Buried Photodiode
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Slide_Index
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hagiwara-yoshiaki@aiplab.com ( http://www.aiplab.com/ )
hagiwara@ssis.or.jp ( http://www.ssis.or.jp/en/index.html )
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