++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++


This is the Top Page of the AIPS HOMEPAGE

++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++


AIPS is the non-profit private organizaion (NPPO)

dedicated to produce educational and inroductory scientific guide books and materials

devoted for the develpments of the Human Friendly Artificial Intelligent Partner System (AIP),

AI Real Time Pattern Recognition Processors and Robotics Intelligent Vision Systems.


+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++


++++++++++++++++++++++++++++++++++++++++++++++
　　
　　　産業タイムズ社の電子デバイス新聞に

　　　2020年11月13日（金）（電子版）に、

　　　萩原良昭の個人活動の紹介記事が掲載されました。

++++++++++++++++++++++++++++++++++++++++++++++


https://www.sangyo-times.jp/article.aspx?ID=5331

Future_of_Intelligent_Image_Sensors_and_PPD_Solar_Cells.html

Future_of_Intelligent_Image_Sensors_and_PPD_Solar_Cells.pdf


++++++++++++++++++++++++++++++++++++++++++++++
　　
　　　2008年の7月にソニーを定年退職後
ソニーの有志とともに神奈川県公認のＮＰＯ法人「ＡＩＰコンソーシアム」を設立しました。

その理事長として人工知能ロボットシステムの実現とその技術開発の進歩のために
奉仕(2008～2017)しておりました。

仲間が皆様70歳以上になったのを皮切りに「店じまい」しました。
しかし、健康なうちは細々と今も個人活動を続けています。

萩原良昭の個人活動の紹介新聞記事が掲載されました。

萩原の活動記録を下記サイトに掲載しております。

++++++++++++++++++++++++++++++++++++++++++++++


賢い電子の目は、自分で考える人工知能搭載ロボットには不可欠です。




P2001_ESSCIRC2001.pdf


P2008_ESSCIRC2008.pdf






++++++++++++++++++++++++++++++++++++++++++++++++++ｆｆ++++++++++++++

Gate Way to AIPS Library

++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

index_001_Enjoy_the_World_of_Hagiwara_Tomie_E_Tegami_Gallery.html

index_002_Enjoy_the_World_of_Hagiwara_Yoshiaki_Talks_and_Photo_Desk.html

index_003_Enjoy_the_World_of_Japanese_Short_Poem.html

index_004_Enjoy_the_World_of_Korean_Conversation.html

index_005_Enjoy_the_World_of_English_Conversation.html

index_006_Enjoy_the_World_of_Mathematics_Physics_and_Relativiry_Theory.html

index_007_Enjoy_the_World_of_Quantum_Mechanics_and_Semiconductor_Device_Physics.html

index_008_Enjoy_the_World_of_Artificial_Intelligent_Partner_System_AIPS_Digital_Circuits.html

index_009_Enjoy_the_World_of_Solid_State_Image_Sensors_and_PPD_Solar_Cells.html

index_010_Hagiwara_is_the_true_inventor_of_Pinned_Photodiode_PPD_and_Sony_HAD.html


++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

Hagiwara at Sony invented Pinned Photodiode in 1975.

以下の内容はすべて一人の老人の独り言です


今までこの歳まで今も、萩原良昭は　
人類の文明のエンジンである、
高性能な半導体電子デバイスを
安く社会に普及させて社会貢献する事を
Life Work　として来ました。

しかし今は、体温計や血液型検査機の様に
誰でも手軽にいつでも低コストで
使用可能なＰＣＲ検査装置が熱望されます。

手軽な低コストのＰＣＲ検査装置の実現を 最優先に
政府は人材とお金と時間（税金）を
投資していただきたい。

音声でのSlide001 の解説です


音声でのSlide002 の解説です


音声でのSlide003 の解説です


音声でのSlide004 の解説です


音声でのSlide005 の解説です


音声でのJP1975-127646_Aの解説です



JPA 1975-127646.pdf

音声でのJP1975-127647_Aの解説です


JPA 1975-127647.pdf


音声でのJP1975-134985_Aの解説です



JP1975-134985_Patent_Claims_in_English_Translation.pdf


JPA 1975-134985.pdf





音声での JP1977-126885 の解説です




JPA 1977-126885.pdf











*********************************************************************
Please write me freely anything related to my activities:
*********************************************************************
hagiwara-yoshiaki@aiplab.com for my activity at http://www.aiplab.com/
hagiwara@ssis.or.jp for my activity at http://www.ssis.or.jp/en/index.html
*********************************************************************
　SSIS_Educaion_Activity ( Members Only )
*********************************************************************

https://www.sony.co.jp/SonyInfo/News/notice/20200626/

Sony says "Hagiwara invented PPD in 1975."

SSIS.or.jp also says "Hagiwara proposed Pinned Photodiode in 1975.

*********************************************************************


ソニーのイメージセンサーの発明の歴史は、古くはCCDの時代までさかのぼる。

中でもPinned Photodiodeは、裏面照射型CMOSセンサーの性能向上にも貢献する
技術であり、その発明と製品開発の歴史を紐解く。

ソニーは1975年、裏面照射型のN+NP+N接合型とN+NP+NP接合型の
Pinned Photodiode（PPD）を採用したCCDイメージセンサーを発明
した（出願特許1975-127646,1975-127647 萩原　良昭）。

同年、その構造をヒントに、VOD（縦型オーバーフロードレイン）機能を持つ、
PNP接合型PPDを発明した（特許第1215101号　萩原　良昭）。

ソニーはその後、イオン打ち込み技術により濃いP+のチャンネルストップ領域を
その受光部近傍に形成したPNP接合型のPPD技術を採用したフレームトランス
ファー型CCDイメージセンサーの原理試作に世界で初めて成功し、1978年の
SSDM1978の学会で論文を発表した（Y. Hagiwara, M. Abe, and C. Okada,
“A 380H x 488V CCD imager with narrow channel transfer gates”, Proc.
The 10th Conference on Solid State Devices, Tokyo, (1978)）。

1980年にはソニーはこのPNP接合型PPD を採用したワンチップのフレーム
トランスファーCCDイメージセンサーを使ったカメラ一体型VTRの試作に成功し、
東京では当時社長の岩間が、ニューヨークでは会長の盛田が同日記者会見を
して世界を驚かせた。1987年にはソニーは、VOD（縦型オーバーフロードレイン）
機能を持つ「イオン打ち込み技術により濃いP+のチャンネルストップ領域を
その受光部近傍に形成したPPD」をインターライン転送型CCDイメージセンサー
に世界で初めて採用した8ミリビデオのカムコーダーの開発に成功しビデオ
カメラの市場を開拓した。

このような長い歴史を経て育まれてきたPPDの技術が今も裏面照射型CMOS
イメージセンサーに採用されている。



++++++++++++++++++++++++++++++++++++++++++++++
2020年11月13日（金）の産業タイムズ社の
電子デバイス新聞（電子版）には萩原良昭
の人物紹介の取材記事が掲載されました。
++++++++++++++++++++++++++++++++++++++++++++++

https://www.sangyo-times.jp/article.aspx?ID=5331


Future_of_Image_Sensors_and_Solar_Cells.pdf

Future_of_Image_Sensors_and_Solar_Cells.html

++++++++++++++++++++++++++++++++++++++++++++++


++++++++++++++++++++++++++++++++++++++++++++++
>>>>>>This is a Gate Way to AIPS_Library <<<<<<<<<
++++++++++++++++++++++++++++++++++++++++++++++


+++++++++++++++++++High Light ++++++++++++++++++

Hagiwara visited Sony Atsugi Tech on July 20, 2020
and talked about Sony Semiconductor Technology

Hagiwara 1975 Pinned Photodiode Patent : JPA_1975_134985/index.html

IEEE_EDTM2020_Paper_on_Pinned_Photodiode_by_Yoshiaki_Hagiwara.html

++++++++++++++++++++++++++++++++++++++++++++++



index001_Image_Sensor_1975_1977_and_2014_Patents.html

index002_Facts_on_Invention_of_Pinned_Photodiode.html

index003_Hagiwara_Publication_List.html

index004_My_Wonderful_Memory_Pictures.html

index005_Image_Sensor_Story_by_Hagiwara.html

index006_Invention_of_Pinned_Photodiode_in_1975.html

Top Homepage of Ogino Junior High School in Atsugi-city


荻野中学校の1月の絵手紙




Back Numbers ....

21.01

20.01 20.02 20.03 ,20.04 20.05 20.06

20.07 20.08 20.09 20.10 20.10x 20.11 20.12

19.01 19.02 19.03 19.04 19.0519.06

19.07 19.08 19.09 19.10　19.10x 19.11　19.12

18.12 18.11 18.10 18.08 18.06 18.05 18.03　18.01　

************************************************



*********************
WAKA ( Japanese Short Poem )
*********************





萩原良昭はこの歌集を教科書にして今和歌を学習中です（笑顔）。

　　　　　

***********************************************
******
豆知識　　<-- 萩原良昭が知らなかった言葉です（苦笑）。
******

岳樺(ダケカンバ）

木犀(もくせい）

曼珠沙華（マンジュシャゲ）

欅（ケヤキ)

凭れる（もたれる）

繁(しげ）

諍(いさか）う

言争（いいあらがう）

ひぐらし

ユキノシタ(雪の下)の花言葉とは？

切岸（きりぎし）とは？

莪 とは　？

蓼莪之詩 (りくがのし)　とは　？

梢（こずえ） とは？
*************************************

********************************************
AIPS Library
*******************************************

Yoshiaki Hagiwara wrote a book on
"the World of Artificial Intelligent Digital Circuits",
which is important and needed to built
the intelligent image sensor systems.

ISBM978-4-88359-339-2
Hard Cover, 460 page,
\ 9000 Japanese Yen + tax



If you are interestied in the book, Please visit

https://www.seizansha.co.jp/ISBN/ISBN978-4-88359-339-2.html

https://www.seizansha.co.jp/

*****************************
理解度アップの基本復習問題
*****************************


●受光素子とは何か？

●電荷転送装置とは？

●感度とは？

●CCD Image Sensor とは？

●CMOS Image Sensor とは？

*****************************


< Pinned Photodiodeの発明に関係する重要特許出願 >

JP1975-127646.pdf

JP1975-127647.pdf

JP1975-134985.pdf

JP1977-126885.pdf

< Pinned Photodiodeの開発に関係する重要学会論文 >

P1978_Pinned_Photodiode_1978_Paper_by_Hagiwara.pdf

P1979_CCD79_in_Edinbourgh_1979.pdf

P1989_SONY_4MSRAM_1989.pdf

P1996_Pinned_Photodidoe_used_in_Sony_1980_FT_CCD_Image_Sensor.pdf

P2001_ESSCIRC2001.pdf

P2008_ESSCIRC2008Hagiwara.pdf

P2013_ISSCC2013PanelTalk.pdf

P2019_3DIC2019Paper_on_3D_Pinned_Photodiode.pdf

P2020_EDTM2020_PaperID_3C4_by_Hagiwara.pdf

P2020_Pinned_Photodiode_Solar_Cell_1.pdf

P2020_Pinned_Photodiode_Solar_Cell_2.pdf


The problem is that very few people understand the difference

between Pinned Photodiode and Buried Photodiode.



NEC also was attacking SONY HAD (PPD) patent but not successful.

Eventually NEC gave up Image Sensor Business.

Hagwiwara and his friends helped defending Sony against the NEC Patent Attack.


*******************************************
Image Sensor の発明と開発背景に関する参考文献
*******************************************


*******************************************
●Active in-Pixel MOS Image Sensor
*******************************************

発明(1968)
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
Peter J. W. Noble,

IEEE Transaction of Electron Devices, 15-4, pp.202-209, (1968)
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

開発報告(1990)
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
Fumihiko Andoh, Kazuhisa Taketoshi, Junichi Yamazaki,
Masayuki Sugawara,
Yoshi hiro Fujita, Kohji Mitani, Yukio Matuzawa,
Kenji Miyata, Shuichi Araki,

"A 25 0,000-Pixel Image Sensor with FET Amplification
at Each Pixel for High-Speed Television Cameras",

ISSCC Digest of Technical Papers, pp. 212-213,298, February 1990.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++




*******************************************
●CCD Image Sensor　
*******************************************

発明(1970)と開発報告(1970)
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
　　W.S.Boyle and G.E. Smith,

Bell System Technical Journal, 49, pp.587-593(1970)
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++



*******************************************
●低雑音化 CDS 回路
*******************************************
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

発明(1974)と開発報告(1974)
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
　　M.H.White, D.R.Lanpe, F.C.Blaha and I.A.MAck,

"Characterization of Surface Channel CCD Image Arrays at Low Light Level.

IEEE Journal of Solid State Circuits, SC-9, pp.1-13 (1974)
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++




*******************************************
●超光感度・低暗電流雑音・残像のない Pinned Photodiode
*******************************************


発明(1975)
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
　　Japanese Patent Applications 1975-127646, 1975-127647,

and 1975-134985 invented by Y.Hagiwara
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

開発報告(1978)
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
Y. Hagiwara, M. Abe, and C. Okada,

“A 380H x 488V CCD imager with narrow channel transfer gates",

Proc. The 10th Conference on Solid State Devices, Tokyo, (1978):
Japanese Journal of Applied Physics, vol. 18, Supplements 18-1,
pp. 335-340, (1979)
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++



*******************************************
●アクションカメラ用の電子シャッター機能
*******************************************

発明(1977)
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
Japanese Patent Application 1977-126885

invented by Y. Hagiwara, S. Ochi and T. Hashimoto.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

開発報告(1987)
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
浜崎正治、鈴木智行、賀川能明、石川貴久枝、宮田克郎、神戸秀夫、

“可変速電子シャタ付IT-CCD撮像素子”、

テレビジョン学会技術報告、vol. 12, no. 12, pp. 31-36, (1988)
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++




*****************************
参考技術書のご紹介
*****************************

「イメージセンサーの本質と基礎」　
黒田隆男 著　
コロナ社　A5版　199頁
ISBN978-4-339-00845-6 　

「固体撮像素子の基礎」
　　安藤隆男・菰淵寛仁　共著　
日本理工出版会 A5版　上製 246頁　
　　ISBN4-89019-193-3

「CCD/CMOS イメージ・センサの基礎と応用」
　　米本和也　著　　
ＣＱ出版社 A5版　271頁
　　ISBN4-7898-3626-6

「CCD/CMOS カメラの原理と実践」
　　安藤幸司　著　　
オーム社 A5版　214頁
　　ISBN978-4-274-06851-5

人工知能パートナーシステム(AIPS)を支える
　「デジタル回路の世界」
　　萩原良昭　著　　
　　青山社　B5版　上製　475頁
　　ISBN978-4-88359-339-2

*****************************

Future_of_Image_Sensors_and_Solar_Cells .pdf

Future_of_Image_Sensors_and_Solar_Cells.html

*************************************************************

(1a) Introduction of SSIS Education Committee Program by Chairman 2020/11/25E
(1b) Introduction of SSIS Education Committee Program by Chairman 2020/11/26G
(1c) Introduction of SSIS Education Committee Program by Chairman 2020/11/30B

https://www.ssis.or.jp/en/index.html

SSIS_Education_Activity ( Members Only ) /index.html

*************************************************************


*************************************************************
(2a) P2020_EDTM2020_PaperID_3C4_by_Hagiwara_2020/03/16
on Simulation and Device Characterization of the P+PN+P Junction Type
(2b) Pinned Photodiode and Schottky Barrier Photodiode with Slide Text (PDF)
(2c) EDTM2020_Pinned Photodiode and Schottky Barrier Photodiode with Slide Audio (html)
*************************************************************

*************************************************************
(3) P2019_3DIC2019_Paper_on_3D_Pinned_Photodiode by Hagiwara 2019
*************************************************************

*******************************************************
(4) Original Japanese Patent Applications on Pinned Photodiode
*******************************************************

JPA1975-127646_on_Triple_Junction_Pinned_Photodiode_with_Global_Shutter_Function.pdf

JPA1975-127647_on_Double_Junction_Pinned_Photodiode_with_Global_Shutter_Function.pdf

JPA_1975_134985/index.html

JP1975-134985_on_Pinned_Photodiode_with_VOD_and_Electric_Shutter_Function.pdf

JPA1977-126885_on_Electric_Shutter_Clocking_Scheme_for _Pinned_Photodiode.pdf

JPA2014-135497_Digital_Transformation_Circuit_for_Image_Sensors.pdf

JPA2020_131313_on_Doubel_Junction_Pinned_Photodiode_Solar_Cell.pdf

History_of_Innovations_in_CMOS_Image_Sensors_edited_by_Hagiwara.pdf

*******************************************************




*******************************************************

(5) Who invented Pinned Photodiode ?.

Hagiwara_Yoshiaki_talks_about_his_1975_inventions_of
Pinned_Phtodiode_in_Japanese_2020_12_06

*******************************************************



*******************************************************
(6) Past Homepages of http://www.aiplab.com
*******************************************************

AIPS_Library/aiplab.com_2020_12_22/index.html

AIPS_Library/aiplab.com_2020_12_17/index.html

AIPS_Library/aiplab.com_2020_12_15/index.html

AIPS_Library/aiplab.com_2020_12_09/index.html

AIPS_Library/aiplab.com_2020_06_27/index.html

AIPS_Library/aiplab.com_2019_07_12/index.html

AIPS_Library/aiplab.com_2018_11_29/index.html

*******************************************************

JP1977-126885.pdf

+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
　　　Very, Very old forgotten inventions are now realized
　　　　　by the Modern Innovative CMOS Technology.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++


Evidently Teranishi did not invent PPD.
Evidently Fossum did not invent the Active in-Pixel CMOS Image Sensor.
Hagiwara invented PPD in 1975 and developped PPD in 1978.
The Active in-Pixel image sensor was invented by Peter Noble in 1968.
The Ando team in NHK developed the Active in-Pixel CMOS image sensor in 1990.

+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
The First Paper reporting the successful development of
Active in-Pixel Image Sensor in 1990.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
Fumihiko Andoh, Kazuhisa Taketoshi, Junichi Yamazaki, Masayuki Sugawara,
Yoshi hiro Fujita, Kohji Mitani, Yukio Matuzawa, Kenji Miyata, Shuichi Araki,

"A 25 0,000-Pixel Image Sensor
with FET Amplification at Each Pixel
for High-Speed Television Cameras",

ISSCC Digest of Technical Papers, pp. 212-213,298, February 1990.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

　





+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
The First Paper reporting the successful development of
the in-Column CDS/ADC Image Sensor in 2006.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++



+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

The in-Pixel Active Amp and the in-Pixel CDS/ADC
in the Back Light Illumiantion Image Sensor.

P2019_3DIC2019Paper_on_3D_Pinned_Photodiode.pdf

+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++





index001_Image_Sensor_1975_1977_and_2014_Patents.html

index002_Facts_on_Invention_of_Pinned_Photodiode.html

index003_Hagiwara_Publication_List.html

index004_My_Wonderful_Memory_Pictures.html

index005_Image_Sensor_Story_by_Hagiwara.html

index006_Invention_of_Pinned_Photodiode_in_1975.html







The first all solid state ( mechanical-parts-free ) video camera was also developped
by Sony Hagiwara Team in 1980 using the CCD/MOS photo capacitor sensor
for the two chip Interline Transfer CCD type Charge Transfer Device (CTD).








JPG001_Sony_Semiconductor_Gp_OBs_support_Hagiwara_1975_PPD_invention

http://www.aiplab.com/Sony_Semiconductor_Gp_OBs_support_Hagiwara_PPD_invention.jpg



JPG002_Sony_acknowledged_that_Hagiwara_invented_PPD_

with_VOD_for_Electric_Shutter_Function


https://www.sony.net/Sonyinfo/News/notice/20200626/



http://www.aiplab.com/Image_Sensor_Story_07.jpg



JPG003_Hagiwara_drew_the_Triple_Junction_Type_

Pinned_Photodiode_in_his_1975_Lab_Note

http://www.aiplab.com/NPNP_junction_Pinned_Photodiode_in_1975_by_Hagiwara_A.jpg



JPG004_Hagiwara_drew_the_Triple_Junction_Type_

Pinned_Photodiode_in_his_1975_Lab_Note

http://www.aiplab.com/image3A_Hagiwara_at_Sony_invented_Pinned_Photodiode_in_1975.jpg




JPG005_Fairchild_Attacked_Sony_but_Hagiwara_defended_

Sony_with_Hagiwara_1975_PPD_Patent

http://www.aiplab.com/End_of_Sony_Fairchild_Patent_War.jpg



E-mail_Communication_on_Sony_Loral_Patent_War.pdf





JPG006_Fairchild_Attacked_Sony_

but_Hagiwara_defended_Sony_with_Hagiwara_1975_PPD_Patent

http://www.aiplab.com/SONY_Fairchild_Patent_War.jpg




Sony lost the chance to acknowledge Hagiwara 1975 inventions to the public,
because the patent wars were still going and Hagiwara had to defend Sony
from the Fairchild, NEC and KODAK patent attacks against Sony.


NEC also was attacking SONY HAD (PPD) patent but not successful.

Eventually NEC gave up Image Sensor Business.

Hagwiwara and his friends helped defending Sony against the NEC Patent Attack.




JPG007_Hagiwara_received_Thanking_Words_

from_Sony_Chairman_Ohga_and_President_Idei.

http://www.aiplab.com/Thank_You_Note_from_President_Ohga.jpg



JPG008_Sony_Chairman_Ohga_and_Hagiwara_

shared_a_happy_time_in_Sony_Chairman_Office

http://www.aiplab.com/SONY_Ohga_Chairman_and_Hagiwara_1996.jpg




JPG009_Sony_President_Idei_awarded_Hagiwara_

the_Bset_Patent_Prize_on_the_Electrical_Shutter_Patent

http://www.aiplab.com/Sony_patent_Award_on_Electric_Shutter_HAD.jpg



JPG010_Sony_President_Ando_awarded_Hagiwara_

the_First_Patent_Prize_on_Pinned_Photodiode_(HAD)_Patent

http://www.aiplab.com/Sony_Patent_Award_on_Pinned_Phtodiode.jpg



JPG011_Sony_President_Ando_and_Hagiwara_

shared_a_happy_time_with_Sony/IEEE_Fellows.

http://www.aiplab.com/SONY_Ando_President_and_Hagiwara_2003.jpg





JPG012_Semiconductor_History_Museum_of_Japan_

also_supoorts__Hagiwara_1975_PPD_invention

http://www.aiplab.com/image3J_Hagiwara_at_Sony_invented_Pinned_Photodiode_in_1975.jpg




JPG013_Semiconductor_History_Museum_of_Japan_

also_supoorts__Hagiwara_1975_PPD_invention

https://www.shmj.or.jp/english/pdf/dis/exhibi1005E.pdf





http://www.aiplab.com/image3E_Hagiwara_at_Sony_invented_Pinned_Photodiode_in_1975.jpg




JPG014_Prof._Albert_Theuwissen_(President_of_Internationl_Image_Sensors_Society)_

quoted_Hagiwara_1978_work in the IEDM2006 paper

https://202011282002569657330.onamaeweb.jp/AIPS_Library/AIPS_190712/image208.jpg

JPG016_Prof._Albert_Theuwissen_also_supoorts__
Hagiwara_1975_PPD_invention_and_Hagiwara_1978_PPD_develpment_works

Hagiwara asked Prof._Albert_Theuwissen
for his expert honest and truthful opinion regarding Hagiwara PPD invention.

It is quite natural that Hagiwara wanted to quote
any supporting expert comments in the public.


Prof. Matu

Obviously, that is why Hagiwara asked the expert opinion in public use.

This was not a private secret e-mail communication.

Any expert words are public property that every want to have respect for.

Hagiwara was very happy to hear Prof. Albert Theuwissen's honest and truthful words.




http://www.aiplab.com/E-mail_communication_with_Albert_san_2018_07_10A.jpg



JPG017_Prof._Albert_Theuwissen_also_supoorts__
Hagiwara_1975_PPD_invention_and_Hagiwara_1978_PPD_develpment_works.

The following e-mail was the reply Hagiwara received

http://www.aiplab.com/E-mail_communication_with_Albert_san_2018_07_10B.jpg



JPG018_Fossum_insulted_Hagiwara_1975_invention_and_Sony_Hole_Accumlation_Diode_(HAD)_invention.

http://www.aiplab.com/image3D_Hagiwara_at_Sony_invented_Pinned_Photodiode_in_1975.jpg

SONY image sensors do not use the LOCOS process of the serious oxidation stress which
induces many crystal defects, causing poor yield of large dark current and white spots.

SONY image sensors use the high energy ion implantation technology intensively to form
the P+ channel stops needed in order to pin the P+ hole accumulation surface potential of
the P+NPNsub triple junction type dynamic photo thyristor with the vertical overflow drain
(VOD) function which is essential for the completely mechanical parts free electrical shutter.



NEC 1982 Buried Photodiode reported in IEDM1982 paper
has the serious image lag problem,
which showes that thie NEC 1982 Buried Phoitodiode was not a Pinned Photodiode.




Teranishi added the P+ channel stops in his recent publications dishonestly. Why ???





JPG019_the_WEB_site_comment supports_the_fact_that_Teranishi's PPD and Fossum's CMOS are fakes.

http://www.aiplab.com/Difference_of_Pinned_Photodiode_and_Buried_Photodiode.jpg



JPG020_The_WEB_site_of_Innovation100_does_not_describe_
the_truth_about_PPD_and_VOD_inventions.

"The first PPD was invented by Hagiwara at Sony"

"It has long been incorrectly attributed to
Teranishi and to Fossum
(on CMOS image sensors).

http://www.aiplab.com/Misunderstanding_on_Pinned_Photodiode_History.jpg





Pinned Photodiode was invented by Yoshiaki Hagiwara at Sony in 1975




The problem is that very few people understand the difference

between Pinned Photodiode and Buried Photodiode.



Difference_of_Pinned_Photodiode_and_Buried_Photodiode.jpg



The P+ channel stops must be very close to each picture element area.

Otherwise there is a serious RC delay time, and the surface P+ region

becomes unstable and fluctuated by the clock couplings and results

in the undesired incomplete charge transfer and the serious image lag.



RC_Delay_of_Flaoting_Buried_Photodiode.jpg



KODAK used LOCOS and evidently there is P+ channel stops in the LOCS region.

Yes, KODAK photodiode is evidently Pinned Photodiode.



Difference_of_Buried_Photodiode_and_Pinned_Photodiode_1.jpg


But NEC IEDM1982 photodiode is NOT clearly PPD.



Teranishi added the P+ channel stops in his recent publications dishonestly. Why ???




Hagiwara_is_the_inventor_of_PPD_not_Teranishi.jpg




Hagiwara_invented_PPD_and_Virtual_Charge_Transfer.jpg


If any portion of the N type charge collecting region is exposed to the silicon surface,
it is by definition NOT Buried Photodiode, hence NOT Pinned Photodiode.





Difference_of_Pinned_Photodiode_and_Buried_Photodiode_1.jpg








+++++++++++++++++++High Light ++++++++++++++++++

Hagiwara 1975 Pinned Photodiode Patent : JPA_1975_134985/index.html

IEEE_EDTM2020_Paper_on_Pinned_Photodiode_by_Yoshiaki_Hagiwara.html

P2019_3DIC2019Paper_on_3D_Pinned_Photodiode.pdf

P2020_EDTM2020_PaperID_3C4_by_Hagiwara.pdf

P2020_Pinned_Photodiode_Solar_Cell_1.pdf

P2020_Pinned_Photodiode_Solar_Cell_2.pdf

++++++++++++++++++++++++++++++++++++++++++++++



index001_Image_Sensor_1975_1977_and_2014_Patents.html

index002_Facts_on_Invention_of_Pinned_Photodiode.html

index003_Hagiwara_Publication_List.html

index004_My_Wonderful_Memory_Pictures.html

index005_Image_Sensor_Story_by_Hagiwara.html

index006_Invention_of_Pinned_Photodiode_in_1975.html

++++++++++++++++++++++++++++++++++++++++++++++

JPG021_All_Misunderstandings_on_PPD_inventions_

should_be_clearified_by_Hagiwara_1975_PPD_Patent_Applications.

http://www.aiplab.com/Image_Sensor_Story_14.jpg



JPG022_NEC(Teranishi)_did_not_invented_PPD_in_1979_

and_the_IEDM1982_Teranishi_Photodiode_was_NOT_PPD

http://www.aiplab.com/image3B_Hagiwara_at_Sony_invented_Pinned_Photodiode_in_1975.jpg



JPG023_Difference_of_Buried_Photodiode_and_Pinned_Photodiode_must_be_understood_clearly.

http://www.aiplab.com/Difference_of_Pinned_Photodiode_and_Buried_Photodiode_1.jpg



JPG024_Difference_of_Buried_Photodiode_and_Pinned_Photodiode_must_be_understood_clearly.

http://www.aiplab.com/Difference_of_Buried_Photodiode_and_Pinned_Photodiode_1.jpg



JPG025_Pinned_Photodiode_must_have_Adjacent_Channel_Stops_nearby_

........in order to_pin_the_surface_ P+_hole_accumulation_layer....

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer.jpg



JPG025_Hagiwara_invented_in_1975_the_P+NPsub double_junction_dynamic_photo_transistor_

..............with...1) Very Excellent Short Wave Blue Light Sensitivity,
........................2) Comptete Charge Transfer Capability with Image Lag Free Feature
........................3) and Pinned Surface P+ Hole Accumulation with No Surface Dark Current.

.........and_Hagiwara_also_invented_in_1975_the_triple_junction_dynamic_photo_thyristor
..........with...4) Completely Charge Draining Vertical Overflow Drain (VOD) function
...................needed in the completely mechanical-free electrical shutter function
................... for the modern Filmless and Completely Electrical Image Sensors.

http://www.aiplab.com/Difference_of_Static_and_Dynamic_Photo_Transistor.jpg



JPG026_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S01.jpg



JPG027_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S02.jpg




JPG028_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S03.jpg



JPG029_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S04.jpg



JPG030_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S05.jpg



JPG031_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S06.jpg



JPG032_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S07.jpg



JPG033_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S08.jpg



JPG034_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/P1996_no_image_lag_pinned_photo-diode_invented_in_1975_by_Hagiwara.jpg



JPG035_Hagiwara_invented_in_1975_
the_double_junction_dynamic_photo_transistor_and_
the_triple_junction_dynamic_photo_thyristor

http://www.aiplab.com/JP1975-134985_Patent_Claims_in_English_Translation.jpg



JPG036_Hagiwara_invented_in_1975_
the_double_junction_dynamic_photo_transistor_
with_no_image_lag_feature_and_VOD_function

http://www.aiplab.com/Two_type_of_VOD_in_JP1975-134985.jpg




JPG037_Most_important_Contribution_of_
Hagiwsara_1975_PPD_invention_
was_the_short_wave_blue_light_Sensitivity


http://www.aiplab.com/What_is_True_Pinned_Photodiode.jpg

JPG038_Most_important_Contribution_of_Hagiwsara_1975_PPD_invention_
was_the_short_wave_blue_light_Sensitivity

http://www.aiplab.com/Pinned_Photodiode_Drift_Field_Trasistor.jpg



JPG039_Most_important_Contribution_of_Hagiwsara_1975_PPD_invention_
was_the_short_wave_blue_light_Sensitivity

http://www.aiplab.com/Pinned_Photodiode_Reported_in_Hagiwara_SSDM1978_Paper.jpg


+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++


+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

JPG040_Hagiwara _also_designed_and_developed the_CCD/MOS_Photo_Capacitor_type

.................. Two_Chip_Interline_Transfer (ILT)_type_CCD_Image_Sensor_in_1980,

................... which has the CCD/MOS type complete charge transfer function

................... with the excellent image lag free feature for fast action pictures

..................... and used in the ANA 747 JumboJet Cockpits.

JPG040_Image_Sensor_Story_08.jpg





Sony EX-President Kazuo Iwama attended the First IEEE ISSCC1954conference,
was the leader and the father of Sony's Devlopment Eforts for Bipolar Transistor
and Sony Portable Transistor Radios, and is now considered to be the Father of
Sony's Development Efforts of CCD and CMOS Image Sensor Products. Hagiwara
published his PhD thesis paper on the charge transfer analysis of the Buried
Channel CCD image sensors in the ISSCC1974 conference. One year later,
Hagiwara joined Sony on February 1975 and worked for developping CCD image
sensors at Sony Central Research Center in Yokohama, Japan.

JPG041_Iwama_Kasuo_in_ISSCC1954.jpg



Hagiwara served in various international technical conference committees including ISSCC.

JPG042_ISSCC2003_Executive_Committee_Contribution_Award.jpg



Hagiwara did not publish various important suttle techical items,
but they helped a lot to produce high performance image sensors..

JPG043_Lightly_Doped_Drain_used_in_Sony_1978_Process.jpg



JPG044_Memory_of_Friends_in_Sony_Kumamoto_Tech.jpg



JPG045_Memory_Sony_Kumamoto_tech.jpg



Hagiwara owes so much to Prof. James McCaldin, Prof. T.C. McGill
and Prof.C.A. Mead at California Institute for Technology (Caltech).

Hagiwara studied the bipolar transistor structure and the operational
physics from the Feyman Lecture Book when he was the seoncd year
of his undergradute student life in Caltech, Pasadena in 1968 at age 20.

JPG046_Memory1998_Prof_T_C_McGill_and_Prof_James_McCaldin.jpg






JPG047_My_Lief_Long_Dream__Hagiwara_Yoshiaki.jpg





+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++




JPG048_Origin_of_1975_Concept_of_Pinned_Photodiode_.jpg






JPG049_P2001_ESSCIRC2001_SONY_AIBO.jpg



JPG050_P2020_Minimum_Potential_and_Width_of_Solar_Cell.jpg





JPG051_Pinne_Photodiode_Solar_Cell.jpg








JPG052_Pinned_Photodiode_Surface_Barrier_Potential.jpg



+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

JPG053_Pinned_Photodiode_Surface_Barrier_Potential_1.jpg




JPG054_Pinned_Photodiode_Surface_Barrier_Potential_2.jpg




JPG055_Pinned_Photodiode_Surface_Barrier_Potential_3.jpg




JPG056_Proposal_of_Pinned_Photodiode_type_Solar_Cell.jpg




JPG057_Proposal_of_Pinned_Photodiode_type_Solar_Cell_01.jpg




JPG058_Proposal_of_Pinned_Photodiode_type_Solar_Cell_02.jpg




JPG059_Proposal_of_Pinned_Photodiode_type_Solar_Cell_03.jpg



JPG061_Proposal_of_Pinned_Photodiode_type_Solar_Cell_04.jpg



JPG062_Proposal_of_Pinned_Photodiode_type_Solar_Cell_05.jpg



JPG063_Proposal_of_Pinned_Photodiode_type_Solar_Cell_06.jpg



JPG064_Proposal_of_Pinned_Photodiode_type_Solar_Cell_07.jpg






JPG065_Proposal_of_Pinned_Photodiode_type_Solar_Cell_09.jpg



JPG066_Proposal_of_Pinned_Photodiode_type_Solar_Cell_10.jpg



JPG067_Proposal_of_Pinned_Photodiode_type_Solar_Cell_11.jpg



JPG068_PS3_Cell_Proceesor_Sony_Team_Award.jpg



JPG069_Self_Driving_Car_TV_interview_2013.jpg



JPG070_Simple_PN_junction_Solar_Cell.jpg



JPG071_Slide019A_Sony_Atsugi_Tech_2020_07_10.jpg



JPG072_Slide023A_Sony_Atsugi_Tech_2020_07_10.jpg





JPG073_Solar_Cell_with_High_Blue_Light_Sensitivity.jpg






JPG074_Sony_Atsugi_Tech_Lab_Note_in_Summer_1971_by_Yoshiaki_Daimon_Hagiwara.jpg





JPG075_Sony_Kodak_Patent_Agreement.jpg



Hagiwara invented in 1975 the double junction type dynamic photo transistor which was

later called as Pinned Photodiode by Kodak in IEDM1984, and also Hagiwara invented

in 1975 the triple junction type dynamic photo thyristor, which as later called in 1987

as Sony's Hole Accumulation Diode (HAD), the NPNP junction thyristor type photodiode ,

with the punch thru operationwhich is applied to achieve the vertical overflow drain

and the electrical shutter functionsfor fact action movie camera pictures with the

completely image lag free and mecahnical parts free features for the Filmless society.

JPG076_Three_types_of_in_pixel_Vertical_Overflow_Drain_VOD.jpg



+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++


JPG001_Sony_Semiconductor_Gp_OBs_support_Hagiwara_1975_PPD_invention

http://www.aiplab.com/Sony_Semiconductor_Gp_OBs_support_Hagiwara_PPD_invention.jpg


JPG002_Sony_acknowledged_that_Hagiwara_invented_PPD_with_VOD_for_Electric_Shutter_Function

http://www.aiplab.com/Image_Sensor_Story_07.jpg


JPG003_Hagiwara_drew_the_Triple_Junction_Type_Pinned_Photodiode_in_his_1975_Lab_Note

http://www.aiplab.com/NPNP_junction_Pinned_Photodiode_in_1975_by_Hagiwara_A.jpg


JPG004_Hagiwara_drew_the_Triple_Junction_Type_Pinned_Photodiode_in_his_1975_Lab_Note

http://www.aiplab.com/image3A_Hagiwara_at_Sony_invented_Pinned_Photodiode_in_1975.jpg


JPG005_Fairchild_Attacked_Sony_but_Hagiwara_defended_Sony_with_Hagiwara_1975_PPD_Patent

http://www.aiplab.com/End_of_Sony_Fairchild_Patent_War.jpg


JPG006_Fairchild_Attacked_Sony_but_Hagiwara_defended_Sony_with_Hagiwara_1975_PPD_Patent

http://www.aiplab.com/SONY_Fairchild_Patent_War.jpg


JPG007_Hagiwara_received_Thanking_Words_from_Sony_Chairman_Ohga_and_President_Idei.

http://www.aiplab.com/Thank_You_Note_from_President_Ohga.jpg

JPG008_Sony_Chairman_Ohga_and_Hagiwara_shared_a_happy_time_in_Sony_Chairman_Office

http://www.aiplab.com/SONY_Ohga_Chairman_and_Hagiwara_1996.jpg

JPG009_Sony_President_Idei_awarded_Hagiwara_the_Bset_Patent_Prize_on_the_Electrical_Shutter_Patent

http://www.aiplab.com/Sony_patent_Award_on_Electric_Shutter_HAD.jpg

JPG010_Sony_President_Ando_awarded_Hagiwara_the_First_Patent_Prize_on_Pinned_Photodiode_(HAD)_Patent

http://www.aiplab.com/Sony_Patent_Award_on_Pinned_Phtodiode.jpg

JPG011_Sony_President_Ando_and_Hagiwara_shared_a_happy_time_with_Sony/IEEE_Fellows.

http://www.aiplab.com/SONY_Ando_President_and_Hagiwara_2003.jpg

JPG012_Semiconductor_History_Museum_of_Japan_also_supoorts__Hagiwara_1975_PPD_invention

http://www.aiplab.com/image3J_Hagiwara_at_Sony_invented_Pinned_Photodiode_in_1975.jpg


JPG013_Semiconductor_History_Museum_of_Japan_also_supoorts__Hagiwara_1975_PPD_invention

http://www.aiplab.com/image3E_Hagiwara_at_Sony_invented_Pinned_Photodiode_in_1975.jpg


JPG014_Prof._Albert_Theuwissen_(President_of_Internationl_Image_Sensors_Society)_quoted_Hagiwara_1978_work

https://202011282002569657330.onamaeweb.jp/AIPS_Library/AIPS_190712/image208.jpg


JPG016_Prof._Albert_Theuwissen_also_supoorts__Hagiwara_1975_PPD_invention_and_Hagiwara_1978_PPD_develpment_works

http://www.aiplab.com/E-mail_communication_with_Albert_san_2018_07_10A.jpg

JPG017_Prof._Albert_Theuwissen_also_supoorts__Hagiwara_1975_PPD_invention_and_Hagiwara_1978_PPD_develpment_works

http://www.aiplab.com/E-mail_communication_with_Albert_san_2018_07_10B.jpg


JPG018_Fossum_insulted_Hagiwara_1975_invention_and_Sony_Hole_Accumlation_Diode_(HAD)_invention.

http://www.aiplab.com/image3D_Hagiwara_at_Sony_invented_Pinned_Photodiode_in_1975.jpg


JPG019_the_WEB_site_comment supports_that_Teranishi's PPD and Fossum's CMOS are fakes.

http://www.aiplab.com/Difference_of_Pinned_Photodiode_and_Buried_Photodiode.jpg

JPG020_The_WEB_site_of_Innovation100_does_not_describe_the_truth_about_PPD_and_VOD_inventions.

http://www.aiplab.com/Misunderstanding_on_Pinned_Photodiode_History.jpg


JPG021_All_Misunderstandings_on_PPD_inventions_should_be_clearified_by_Hagiwara_1975_PPD_Patent_Applications.

http://www.aiplab.com/Image_Sensor_Story_14.jpg


JPG022_NEC(Teranishi)_did_not_invented_PPD_in_1979_and_the_IEDM1982_Teranishi_Photodiode_was_NOT_PPD

http://www.aiplab.com/image3B_Hagiwara_at_Sony_invented_Pinned_Photodiode_in_1975.jpg


JPG023_Difference_of_Buried_Photodiode_and_Pinned_Photodiode_must_be_understood_clearly.

http://www.aiplab.com/Difference_of_Pinned_Photodiode_and_Buried_Photodiode_1.jpg

JPG024_Difference_of_Buried_Photodiode_and_Pinned_Photodiode_must_be_understood_clearly.

http://www.aiplab.com/Difference_of_Buried_Photodiode_and_Pinned_Photodiode_1.jpg


JPG025_Pinned_Photodiode_must_have_Adjacent_Channel_Stops_nearby_

................in order to_pin_the_surface_ P+_hole_accumulation_layer....

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer.jpg


JPG025_Hagiwara_invented_in_1975_the_P+NPsub double_junction_dynamic_photo_transistor_

..............with...1) Very Excellent Short Wave Blue Light Sensitivity,
........................2) Comptete Charge Transfer Capability with Image Lag Free Feature
........................3) and Pinned Surface P+ Hole Accumulation with No Surface Dark Current.

.........and_Hagiwara_also_invented_in_1975_the_triple_junction_dynamic_photo_thyristor
..............with...4) Completely Charge Draining Vertical Overflow Drain (VOD) function
............................... needed in the completely mechanical-free electrical shutter function
................................ for the modern Filmless and Completely Electrical Image Sensors.

http://www.aiplab.com/Difference_of_Static_and_Dynamic_Photo_Transistor.jpg


JPG026_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S01.jpg

JPG027_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S02.jpg

JPG028_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S03.jpg

JPG029_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S04.jpg

JPG030_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S05.jpg

JPG031_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S06.jpg

JPG032_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S07.jpg

JPG033_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/Hagiwara_invented_PPD_and_Virtual_Charge_Transfer_in_1975_S08.jpg

JPG034_Hagiwara_invented_the_Virtual_Phase_Charge_Transfer_in_1975

http://www.aiplab.com/P1996_no_image_lag_pinned_photo-diode_invented_in_1975_by_Hagiwara.jpg

JPG035_Hagiwara_invented_in_1975_the_double_junction_dynamic_photo_transistor_and_the_triple_junction_dynamic_photo_thyristor

http://www.aiplab.com/JP1975-134985_Patent_Claims_in_English_Translation.jpg


JPG036_Hagiwara_invented_in_1975_the_double_junction_dynamic_photo_transistor_with_no_image_lag_feature_and_VOD_function

http://www.aiplab.com/Two_type_of_VOD_in_JP1975-134985.jpg


JPG037_Most_important_Contribution_of_Hagiwsara_1975_PPD_invention_was_the_short_wave_blue_light_Sensitivity


http://www.aiplab.com/What_is_True_Pinned_Photodiode.jpg

JPG038_Most_important_Contribution_of_Hagiwsara_1975_PPD_invention_was_the_short_wave_blue_light_Sensitivity

http://www.aiplab.com/Pinned_Photodiode_Drift_Field_Trasistor.jpg

JPG039_Most_important_Contribution_of_Hagiwsara_1975_PPD_invention_was_the_short_wave_blue_light_Sensitivity

http://www.aiplab.com/Pinned_Photodiode_Reported_in_Hagiwara_SSDM1978_Paper.jpg

+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

JPG040_Image_Sensor_Story_08.jpg

JPG041_Iwama_Kasuo_in_ISSCC1954.jpg

JPG042_ISSCC2003_Executive_Committee_Contribution_Award.jpg

JPG043_Lightly_Doped_Drain_used_in_Sony_1978_Process.jpg

JPG044_Memory_of_Friends_in_Sony_Kumamoto_Tech.jpg

JPG045_Memory_Sony_Kumamoto_tech.jpg

JPG046_Memory1998_Prof_T_C_McGill_and_Prof_James_McCaldin.jpg

JPG047_My_Lief_Long_Dream__Hagiwara_Yoshiaki.jpg

+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

JPG048_Origin_of_1975_Concept_of_Pinned_Photodiode_.jpg

JPG049_P2001_ESSCIRC2001_SONY_AIBO.jpg

JPG050_P2020_Minimum_Potential_and_Width_of_Solar_Cell.jpg

JPG051_Pinne_Photodiode_Solar_Cell.jpg

JPG052_Pinned_Photodiode_Surface_Barrier_Potential.jpg

+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

JPG053_Pinned_Photodiode_Surface_Barrier_Potential_1.jpg

JPG054_Pinned_Photodiode_Surface_Barrier_Potential_2.jpg

JPG055_Pinned_Photodiode_Surface_Barrier_Potential_3.jpg

JPG056_Proposal_of_Pinned_Photodiode_type_Solar_Cell.jpg

JPG057_Proposal_of_Pinned_Photodiode_type_Solar_Cell_01.jpg

JPG058_Proposal_of_Pinned_Photodiode_type_Solar_Cell_02.jpg

JPG059_Proposal_of_Pinned_Photodiode_type_Solar_Cell_03.jpg

JPG061_Proposal_of_Pinned_Photodiode_type_Solar_Cell_04.jpg

JPG062_Proposal_of_Pinned_Photodiode_type_Solar_Cell_05.jpg

JPG063_Proposal_of_Pinned_Photodiode_type_Solar_Cell_06.jpg

JPG064_Proposal_of_Pinned_Photodiode_type_Solar_Cell_07.jpg

JPG065_Proposal_of_Pinned_Photodiode_type_Solar_Cell_09.jpg

JPG066_Proposal_of_Pinned_Photodiode_type_Solar_Cell_10.jpg

JPG067_Proposal_of_Pinned_Photodiode_type_Solar_Cell_11.jpg

JPG068_PS3_Cell_Proceesor_Sony_Team_Award.jpg

JPG069_Self_Driving_Car_TV_interview_2013.jpg

JPG070_Simple_PN_junction_Solar_Cell.jpg

JPG071_Slide019A_Sony_Atsugi_Tech_2020_07_10.jpg

JPG072_Slide023A_Sony_Atsugi_Tech_2020_07_10.jpg

JPG073_Solar_Cell_with_High_Blue_Light_Sensitivity.jpg

JPG074_Sony_Atsugi_Tech_Lab_Note_in_Summer_1971_by_Yoshiaki_Daimon_Hagiwara.jpg

JPG075_Sony_Kodak_Patent_Agreement.jpg

JPG076_Three_types_of_in_pixel_Vertical_Overflow_Drain_VOD.jpg

+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

PDF001_Buried_Photodiode_is_not_always_PPD_Hagiwara_Nov_2020.pdf

PDF002_Difference_of_Pinned_Photodiode_and_Buried_Photodiode_1.pdf

PDF003_E-mail_Communication_on_Sony_Loral_Patent_War_1996.pdf

PDF004_E-mail_communication_with_Albert_and_Yoshi.pdf

PDF004_E-mail_communication_with_Albert_san_2018_07_10A.pdf

PDF004_E-mail_communication_with_Albert_san_2018_07_10B.pdf

PDF005_Evidence_that_Hagiwara_is_the_inventor_of_Pinned_Photodiode_in_Japanese.pdf

PDF006_Hagiwara_invented_PPD_and_Sony_HAD_in_1975.pdf

PDF007_Image_Sensor_Story_07.pdf

PDF008_Image_Sensor_Story_14.pdf

PDF009_Origin_of_1975_Concept_of_Pinned_Photodiode_.pdf

PDF010_The_evidence_that_Hagiwara_is_the_inventor_of_Pinned_Photodiode_2020_10_02 .pdf

+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

JP1975-127646.pdf

JP1975-127647.pdf

JP1975-134985.pdf

JP1975-134985_JPA 1977058414.pdf

JP1975-134985_Patent_Claim_in_English_Translation.pdf

JP1977-837_Hitachi_Koike.pdf

JP1977-126885.pdf

JP1977-126885_Original.pdf

JP1978-1971_Toshiba_Yamada_VOD_patent.pdf

JP1980-138026_NEC_Teranishi_Patent.pdf

+++++++++++++++++++++++++++++++++++++++++++++

P1976_128_bit_Comparator.pdf

P1978_Pinned_Photodiode_1978_Paper_by_Hagiwara.pdf

P1979_CCD79_in_Edinbourgh_1979.pdf

P1989_SONY_4MSRAM_1989.pdf

P1996_Pinned_Photodidoe_used_in_Sony_1980_FT_CCD_Image_Sensor.pdf

+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

P2001_ESSCIRC2001.pdf

P2008_ESSCIRC2008Hagiwara.pdf

P2013_ISSCC2013PanelTalk.pdf

P2019_3DIC2019Paper_on_3D_Pinned_Photodiode.pdf

P2020_EDTM2020_PaperID_3C4_by_Hagiwara.pdf

P2020_Pinned_Photodiode_Solar_Cell_1.pdf

P2020_Pinned_Photodiode_Solar_Cell_2.pdf

+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++



index001_Image_Sensor_1975_1977_and_2014_Patents.html

index002_Facts_on_Invention_of_Pinned_Photodiode.html

index003_Hagiwara_Publication_List.html

index004_My_Wonderful_Memory_Pictures.html

index005_Image_Sensor_Story_by_Hagiwara.html

index006_Invention_of_Pinned_Photodiode_in_1975.html

*********************************************************************
Please write me freely anything related to my activities: *********************************************************************
hagiwara-yoshiaki@aiplab.com for my activity at http://www.aiplab.com/
hagiwara@ssis.or.jp for my activity at http://www.ssis.or.jp/en/index.html
*********************************************************************