***********************************************
***********************************************
******
豆知識 <-- 萩原良昭が知らなかった言葉です（苦笑）。
******
岳樺(ダケカンバ）
木犀(もくせい）
曼珠沙華（マンジュシャゲ）
欅（ケヤキ)
凭れる（もたれる）
繁(しげ）
諍(いさか）う
言争（いいあらがう）
ひぐらし
ユキノシタ(雪の下)の花言葉とは？
切岸（きりぎし）とは？
莪 とは ？
蓼莪之詩 (りくがのし) とは ？
梢（こずえ） とは？
*************************************
●ハングルの勉強をしています。
*************************************
Hagiwara at Sony invented Pinned Photodiode in 1975.
http://www.aiplab.com/Hagiwara_invented_PPD_and_Sony_HAD_in_1975.pdf
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
The PNP Double Junction Pinned Photodiode (HAD) type Solar Cell
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
- keywords
Pinned Photodiode
Hole Accumulation Diode (HAD)
Empty Potential Well
Barrier Potential
Solar Cell
- Short Topic Description
++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
Solid State Image Sensor has two parts ( A and B ).
++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
The part A is the photo detector which converts
the photo energy ( light ) to the electrical energy ( charge ).
The part B is the charge transfer device (CTD) which trasports
the electrical signal charge to the signal processing unit ( brain ).
++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
The part A, the photo detector, evolved from A1, A2, A3 and A4 types.
++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
They are
A1 = the N+P Single Junction Type Dynamic Photo Diode
A2 = the CCD/MOS Type Dynamic Photo Capacitor
A3 = the P+NP Double Junction Type Dynamic Photo Transistor
and A4 = the P+NPN Triple Junction Type Dynamic Photo Thyristor.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
The part B, the charge transfer device (CTD) evolved from B1, B2 and B3
types.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
They are
B1 = the MOS type charge transfer device (CTD).
B2 = the CCD type charge transfer device (CTD).
and B3 = the CMOS Active Pixel charge transfer device (CTD).
++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
Invention of CCD in 1969 by Boyle and Smith
++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
The B2 type CCD/MOS type CTD and the A2 type CCD/MOS Dynamic
Photo Capacitor type Photo Detector was invented by Boyle and Smith in 1969.
The B2 type CCD/MOS type CTD has the complete signal charge transfer
with no image lag feature. But they have the very large surface dark current
because the MOS capacitor has the large surface electric field which generates
the large surface dark current. Besides, the MOS ( metal, oxide and semiconductor)
photo capacitor has the metal electrode which cannot pass the short wave
blue
light. Hence inherently CCD image sensor has a poor color reproduction capability
and the large surface dark current even though CCD has the low image lag
feature.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
Invention of Active in-Pixel Amplifier Circuit in 1969 by Peter Noble
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
The Active in-Pixel source follower type current amplifier circuit
of the B3 type CTD was invented by Peter Noble way back in 1996
but never became possbile until recently when the sub micron
CMOS process scaling tehnology finally becomes well advanced.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
The P+NP Double Junction type Dynamic Photo Transistor was
invented by Yoshiaki Hagiwara at Sony in 1975. See the Japanese
Patent Applications, JPA 1975-127646, 1975-127647 and 1975-134985.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
The P+NP Double Junction type Dynamic Photo Transistor has
the complete charge transfer function with no image lag feature,
which is nothing new about it since the CCD/MOS photo capacitor
also has the same feature.
However, the P+NP Double Junction type Dynamic Photo Transistor
has the unique features of the excellent short wave blue light
sensitivity and the very low surface dark current feature since
this P+NP Double Junction type Dynamic Photo Transistor has
the Pinned surface P+P Hole Accumulation Barrier Field helping
the photo electron and hole pair separations at the silicon surface
where the short wave blue light cannot penetrate into the silicon
crystal more than 0.2 micro meter in depth into the silicon.
Hagiwara at Sony developped in 1978 this P+NP Double Junction type
Photodiode, which was also a buried photodiode with the charge collecting
buried N region with the P+ hole accumulation surface potential, pinned and
fixed by the adjacen P+ channel stops with the excellent blue light sensitivity.
The first P+NP junction type Photodiode was used in the Frame Transfer
CCD image sensor as reported in SSDM1978 by Yoshiaki Hagiwara at Sony.
The P+NP Double Junction type Photodiode reported in SSDM1978 was also
later used in the Interline CCD image sensor in 1982 by NEC, and was called
as Buried Photodiode in IEDM1982 by NEC. NEC explained the details of the
Buried Photodiode with the complete charge transfer feature with no image
lag. However, the image sensor reported by NEC in IEDM1982 shows the
measured data of some image lag ??? I do not understand why NEC 1982
image sensor had the image lag as seen in Fig. 6. The reason may be
due to the fact the surface P+ region of the NEC P+NP junction photodiode
is NOT pinned and NOT grounded ??? The surface P+ region may be floating
?
In IEDM1984, KODAK also used the P+NP Double Junction type Photodiode
in the Interline CCD image sensor and called it as Pinned Photodiode. KODAK
clearly stated that the surface P+ hole accumulation reigon is pinned and
grounded with the surface flat potential with no electric field to generate
the surfave dark current.
However, the Buired Photodiode reported by NEC in IEDM1982 and the Pinned
Photodiode reported by KODAK in IEDM1984 and the P+NPN triple junction
type photodiode reported by Sony in 1987 and called as the Hole Accumulation
Diode (HAD) are all the same P+NP(N) junction type Multi Junction Photodiodes,
invented by Hagiwara in 1975 and developed also by Hagiwara in 1978 and
used
in the Frame Transfer CCD image sensor as reported in SSDM1978 by Hagiwara.
Fossum 2014 is a fake paper which did not report the truth !.
The surface thin and shallow P+ hole accumulation layer is formed
by the self-aligned ion implantation in the final processing stage.
The depth of the surface P+ hole accumulation layer
must be very shallow and less than 0. 2 micro meter
since the short wave blue light cannot penetrate
into the silicon cystal more than 0. 2 micro meter
in depth. The P+ thin layer stripe of the length L
has a large resitance R and a large capacitance C,
and then, also a large time delay constant of T=RC ,
which makes the P+ thin hole accumulaion layer
effectively floating. Therefore, this photodiode may
have a serious image lag ?? Any photodiode with
the serious image lag cannot be Pinned Photodiode.
This photodiode may not be Pinned Photodiode ????
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
The P+NPN Triple Junction type Dynamic Thyristor Photo Sensor, which
was developped in 1987 by Hamazaki team later called as Hole Accumulation
diode(HAD) by Sony has the vertical overflow drain (VOD) and the eletrical
shutter funtion. This P+NPN Triple Junction type Dynamic Thyristor Photo
Sensor was also invented by Yoshiaki Hagiwara at Sony in 1975. See also
the Patent Applications, JPA 1975-127646, 1975-127647 and 1975-134985.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
Hagiwara at Sony is the inventor and also the developper of the P+NP double
junction type Pinned Photodiode. Hagiwara also invented the P+NPN triple
junction type Pinned Photodiode with the vertical overflow drain (VOD) and
the electrical shutter function.
In 1987, the Hamazaki team in Sony developed the P+NPN triple junction type
Pinned Photodiode, named it as Hole Acculation Diode (HAD) and used it in
Interline Transfer Type CCD Image Sensors.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
The P+PNPP+ double junction type Pinned Photodiode type Solar Cell
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
Most of the solar cells are still of the N+P single junction type.
Here now the Pinned surface P+PNPP+ double junction type Solar Cell
is proposed, which is expected to have a very large quantum efficiency
of more than junction 60% , by using the surface hole accumulation (HAD)
region with the pinned P+P surface and the surface barrier potential
which separates the hole electron pairs generated by the short wave blue
light very effectively in the pinned silicon P+P surface barrier electric field.
A very hige efficient Pinned Photodiode (HAD) type Solar Cell is expected
to be manufactured with a very cost-effective simple fabrication process.
+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
************************************************
What is Pinned Photodiode ?
*************************************************
Pinned Photodiode is a double junction type photodiode
with the buried charge collection storage (base) region
and with the pinned surface flat potential fixed by the
adjacent channel stops. This unique photodiode has
many wonderful features that realized the modern solid
state electric eye for AI Robot Vision.
The pinned surface potential gives the flat surface
potential with no surface electric field. Hence there
is no surface electric induced surface dark current.
The signal charge stored in the buried storage (base)
region can be transfered compleletly to the adjacent
charge transfer gate (CTD) with no image lag feature.
The complete photo signal charge transfer results in
the completely empty potential well in the buried
storage (base) region which is the evidence of the
image lag free picture quality for action movie cameras.
Yoshiaki Hagiwara at Sony in 197,for the first time in
the world, drew this empty potential wells in the Fig. 6
of his Japanese patent application JPA 1975-134985 and
also Fig. 7 of JPA 1975-127646 and JPA 1975-127647.
************************************************
*******************************************************************
Fig.7 of JPA 1975-127647, the original Japanese patent on the double
junction type Pinned Photodiode shows the empty potential well which
implies the complete charge transfer operation of no image lag feature.
This is the evidence that Hagiwara is the true inventor of Pinned Photodiode.
******************************************************************
Sony developed the double junction type Pinned Photodiode in 1978 and
reported
in SSDM1978 paper. And Then Sony used this double junction type Pinned
Photodiode for the one chip video movie camera in 1980.
Sony developed the triple junction type Pinned Photodiode in 1987 with
the
complete Electric Shutter Function with no image lag and for action pictures.
This triple junction type Pinned Photodiode shown above and defined in
the
Japanese Patent Application JPA 1975-134985 was originally hinted by the
triple junction type Pinned Photodiode defined in Japanese Patent Application
JPA 1975-127646 shown below which is also inventedby Hagiwara in 1975.
Hagiwara is the inventor of the Electrical Shutter Function of Pinned Photodiode.
Electric Shutter Function is possible only in the image lag free photo
sensors.
Only the CCD/MOS capacior type photo sensors
and Pinned Photodiode type photo sensors are
the complete image lag free photo sensors.
Only the classical CCD/MOS capacitor type
and the triple junction type Pinned Photodiode,
invented by Hagiwara in 1975, can serve for
the completely filmless cameras, which is also
completely free from any mechanical parts.
CCD/MOS photo capacitor has the serioous large surface dark current problem.
Hagiwara invented the double and triple junction Pinned Photodiodes with
the
Pinned Surface P+ Emitter region and the Buried Base Photo Charge Storage
region with the complete charge transfer function capability with no image
lag.
http://www.aiplab.com/NPNP_junction_Pinned_Photodiode_in_1975_by_Hagiwara_A.jpg
http://www.aiplab.com/JP1975-127647_A.jpg
http://www.aiplab.com/JP1975-134985_Patent_Claim_in_English.jpg
http://www.aiplab.com/JP1975-127646_A.jpg
http://www.aiplab.com/P1978_SSDM1978_Paper_on_Pinned_Photodiode_A.jpg
http://www.aiplab.com/Pinned_Photodiode_Reported_in_Hagiwara_SSDM1978_Paper.jpg
http://www.aiplab.com/What_is_True_Pinned_Photodiode.jpg
*****************************************************************
The Evidence that Hagiwara at Sony is the inventer of Pinned Photodiode
is
given by the three 1975 Japanese Patent Applications , JPA 1975-127646,
JPA 1975-127647 and JPA 1975-134985. Details are explained below.
*****************************************************************
Hagiwara is also the inventor of the Global Shutter Function
needed in the modern CMOS Image Sensors. For the details,
please read the conference publication papers:
http://www.aiplab.com/P2019_3DIC2019Paper_on_3D_Pinned_Photodiode.pdf
http://www.aiplab.com/P2020_EDTM2020_PaperID_3C4_by_Hagiwara.pdf
Pinned Photodiode has an excellent short wave blue light sensitivity
that can be also applied to the Pinned Photodiode type Solar Cells.
http://www.aiplab.com/P2020_Pinned_Photodiode_Solar_Cell_1.pdf
http://www.aiplab.com/P2020_Pinned_Photodiode_Solar_Cell_2.pdf
************************************************************
Hagiwara at Sony invented Pinned Photodiode in 1975
index000_Invention_of_Pinned_Photodiode_in_1975.html
index001_Image_Sensor_1975_1977_and_2014_Patents.html
index002_Facts_on_Invention_of_Pinned_Photodiode.html
index003_Hagiwara_Publication_List.html
index004_My_Wonderful_Memory_Pictures.html
index005_Image_Sensor_Story_by_Hagiwara.html
index006_Slide_Sony_Atsugi_Tech_2020_07_10.html
*************************************************************
http://www.aiplab.com/Memo_2020_09_17_by_Yoshiaki_Hagiwara.html
http://www.aiplab.com/JP1975-134985.pdf
Who invented the Pinned Photodiode ?
Yoshiaki Hagiwara invented Pinned Photodiode in 1975.
Who invented the Electric Shutter ?
Yoshiaki Hagiwara invented Electric Shutter in 1975.
Who invented the Global Shutter ?
Yoshiaki Hagiwara invented Electric Shutter in 1975.
Yoshiaki Hagiwara wrote a book on
"the World of Artificial Intelligent Digital Circuits",
which is important and needed to built
the intelligent image sensor systems.
ISBM978-4-88359-339-2
Hard Cover, 460 page,
\ 9000 Japanese Yen + tax
If you are interestied in the book, Please visit
https://www.seizansha.co.jp/ISBN/ISBN978-4-88359-339-2.html
https://www.seizasha.co.jp/
Hagiwara at Sony invented Pinned Photodiode in 1975.
http://www.aiplab.com/Hagiwara_invented_PPD_and_Sony_HAD_in_1975.pdf
**************************************************************
単純質問豆知識：
(1) CCD カメラと CMOSカメラの違いは何ですか？
(2) ＣＭＯＳ Image Sensor は CMOS Processで造れますか？
**************************************************************
(1) CCD カメラと CMOSカメラの違いは何ですか？
**************************************************************
●イメージセンサーには２つの部分に別れますが、
光電変換素子(A)と電荷転送装置(B)です。
光信号エネルギーを電気信号エネルギーに
変換する光電変換素子(A)がまずあります。
光電変換原理はイメージセンサーも
太陽電池も同じ動作原理です。
光電変換装置（Ａ）は N+P接合容量(A1)から、
CCD/MOS容量(A2)、P+NP double 接合容量(A3),
そしてさらにP+NPN triple 接合容量(A3)に進化しました。
電荷転送装置(B)は MOS型(B1)電荷転送装置、
CCD型(B2) 電荷転送装置、そして今では、
CMOS型(B3)電荷転送装置に進化しました。
CCD カメラと CMOSカメラの違いは単純に電荷転送装置の部分の違いです。
アナログＴＶ時代は、CCD型(B2) 電荷転送装置の性能で充分でしたが
デジタルＴＶ時代では、CCD型(B2) 電荷転送装置の性能では不十分に
なりました。ＣＣＤはもう必要なくなりました。その代わりに、ＣＭＯＳの
微細加工技術の進化に伴い、CMOS型(B3)電荷転送装置が実用
耐えるほど進化しました。それで現在は CMOS カメラが市場制覇しています。
**************************************************************
(2) ＣＭＯＳ Image Sensor は CMOS Processで造れますか？
**************************************************************
●CMOS Image Sensor の製作プロセスフローは
一般のCMOS Image Sensor Process より複雑ですが
CCD Image Sensor の Process ほど 難しくは
ありません。生産 Knowhow も必要ありません。
しかし裏面照射型のCCD Image Sensorの製法になると、
たいへん異なります、というか、非常に複雑で長い
プロセスフローになります。。
●シリコンウェーハ―の表面から裏面まで深い井戸を
シリコン結晶に小さなん穴を無数に掘り、その中に
金属（Cu）を埋める工程なども含みます。
●イメージセンサーには２つの部分に別れますが、
光電変換素子(A)と電荷転送装置(B)です。
光信号エネルギーを電気信号エネルギーに
変換する光電変換素子(A)がまずあります。
光電変換原理はイメージセンサーも
太陽電池も同じ動作原理です。
光電変換装置（Ａ）は N+P接合容量(A1)から、
CCD/MOS容量(A2)、P+NP double 接合容量(A3),
そしてさらにP+NPN triple 接合容量(A3)に進化しました。
電荷転送装置(B)は MOS型(B1)電荷転送装置、
CCD型(B2) 電荷転送装置、そして今では、
CMOS型(B3)電荷転送装置に進化しました。
●その電気信号エネルギー（電荷）はアナログ信号
ですのでまず高速に ＡＤ変換し、デジタル信号にして出力
します。イメージセンサーの入力生制御信号も、AD変換
された信号ですので、デジタル映像信号です。それが今では
そのままデジタルＴＶに入力されます。
●デジタル映像信号(１と０)を処理する
のは CMOS LOGIC 回路で充分です。
●それで、イメージセンサーのChip内面積の周辺部分は
ほとんどCMOS LOGIC回路であり、CMOS LOGIC
Processで充分ですが、中央の光電変換部分が特に
CMOS LOGIC Process と異なります。
●しかし、イメージセンサー光電変換素子や信号電荷を
転送する回路装置が必要となり、機能が多くなるほど、
それに応じてプロセス工程も複雑になりますが、
そのぶん、複雑でたいへん有用な機能が実現します。
●8-24に断面図は裏面照射型の最新の
ＣＭＯＳ イメージセンサーの断面図です。
●周辺にはＣＭＯＳ LOGIＣ回路を使っていますが、
中央の光電変換回路は NMOS のSwitch 回路だけで
PMOS 回路は使っていません。イメージセンサーの中央部分は
NMOS回路と Bipolar 回路が融合したものです。
●中央には 光電変換素子を形成するために
PNP 接合がいろいろあり、NMOSプロセスと Bipolar
トランジスタをごちゃまぜにした非常に複雑なプロセスです。
●それでも、出力映像信号は、普通のCMOS LOGIC
回路から出力されたデジタル映像信号ですので、今は
CMOS Image Sensor と呼ばれています。
**************************************************************
Hagiwara at Sony invented Pinned Photodiode in 1975
index000_Invention_of_Pinned_Photodiode_in_1975.html
index001_Image_Sensor_1975_1977_and_2014_Patents.html
index002_Facts_on_Invention_of_Pinned_Photodiode.html
index003_Hagiwara_Publication_List.html
index004_My_Wonderful_Memory_Pictures.html
index005_Image_Sensor_Story_by_Hagiwara.html
index006_Slide_Sony_Atsugi_Tech_2020_07_10.html
*************************************************************
http://www.aiplab.com/Proposal_of_Pinned_Photodiode_type_Solar_Cell_2020_09_28.html
http://www.aiplab.com/Memo_2020_09_20_by_Yoshiaki_Hagiwara.html
http://www.aiplab.com/Memo_2020_09_17_by_Yoshiaki_Hagiwara.html
http://www.aiplab.com/Memo_2020_08_29_by_Yoshiaki_Hagiwara.html
http://www.aiplab.com/Memo_2020_08_23_by_Yoshiaki_Hagiwara.html
http://www.aiplab.com/Memo_2020_08_21_by_Yoshiaki_Hagiwara.html
***************************************************************
***********************************************************
Hagiwara Publication List
*********************************************************
Please visit for details
http://www.aiplab.com/index003_Hagiwara_Publication_List.html
*******************************************
Basic Patent Applications on Pinned Photodiode
*******************************************
http://www.aiplab.com/JP1975-127646.pdf
http://www.aiplab.com/JP1975-127647.pdf
http://www.aiplab.com/JP1975-134985.pdf
http://www.aiplab.com/JP1977-126885.pdf
*******************************************
Pinned Photodiode Papers published by Hagiwara
*******************************************
http://www.aiplab.com/P1978_Pinned_Photodiode_1978_Paper_by_Hagiwara.pdf
https://www.imagesensors.org/Past%20Workshops/1979%20CCD79/03-1%20Hagiwara.pdf
http://www.aiplab.com/P1996_Pinned_Photodidoe_used_in_Sony_1980_FT_CCD_Image_Sensor.pdf
http://www.aiplab.com/P2001_ESSCIRC2001.pdf
http://www.aiplab.com/P2008_ESSCIRC2008Hagiwara.pdf
http://www.aiplab.com/P2019_3DIC2019Paper_on_3D_Pinned_Photodiode.pdf
http://www.aiplab.com/P2020_EDTM2020_PaperID_3C4_by_Hagiwara.pdf
****************************************************
****************************************************
Unpublished Works on the Pinned Photodiode type Solar Cell
****************************************************
http://www.aiplab.com/P2020_Pinned_Photodiode_Solar_Cell_1.pdf
http://www.aiplab.com/P2020_Pinned_Photodiode_Solar_Cell_2.pdf
****************************************************
************************************************************
Slides related to the Pinned Photodiode invented by Hagiwara in 1975
************************************************************
http://www.aiplab.com/JP1975-127647_A.jpg
http://www.aiplab.com/JP1975-134985_Patent_Claim_in_English.jpg
http://www.aiplab.com/JP1975-127646_A.jpg
http://www.aiplab.com/P1978_SSDM1978_Paper_on_Pinned_Photodiode_A.jpg
http://www.aiplab.com/Pinned_Photodiode_Reported_in_Hagiwara_SSDM1978_Paper.jpg
http://www.aiplab.com/What_is_True_Pinned_Photodiode.jpg
http://www.aiplab.com/NPNP_junction_Pinned_Photodiode_in_1975_by_Hagiwara_A.jpg
http://www.aiplab.com/Origin_of_1975_Concept_of_Pinned_Photodiode_.jpg
http://www.aiplab.com/Pinne_Photodiode_Solar_Cell.jpg
http://www.aiplab.com/Solar_Cell_with_High_Blue_Light_Sensitivity.jpg
http://www.aiplab.com/Image_Sensor_Story_36.jpg
http://www.aiplab.com/Image_Sensor_Story_35.jpg
http://www.aiplab.com/Difference_of_Static_and_Dynamic_Photo_Transistor.jpg
http://www.aiplab.com/Pinned_Photodiode_Drift_Field_Trasistor.jpg
http://www.aiplab.com/P1978_SSDM1978_Paper_Lightly_Doped_Drain_Output_Cirucuit.jpg
http://www.aiplab.com/Slide023A_Sony_Atsugi_Tech_2020_07_10.jpg
**************************************************************************
AIPS Library Under Construction Now
*********************************************************************
Please write me freely anything related to my activities:
*********************************************************************
hagiwara-yoshiaki@aiplab.com for my activity at http://www.aiplab.com/
hagiwara@ssis.or.jp for my activity at http://www.ssis.or.jp/en/index.html
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